Mos capacitor, semiconductor fabrication method and mos capacitor circuit
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSZU-LIN LIU, JAW-JUINN HORNG, YUNG-CHOW PENG
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Abstract
A metal-oxide-semiconductor (MOS) capacitor is disclosed. The MOS capacitor includes a front-end-of-the-line (FEOL) field effect transistor (FET), and a plurality of middle-end-of-the-line (MEOL) conductive structures. The FEOL FET includes a source region and a drain region positioned in a semiconductor substrate, and a gate over the semiconductor substrate. The plurality of MEOL conductive structures is disposed on a top surface of the gate. At least one of the MEOL conductive structures is electrically disconnected from a back-end-of-the-line (BEOL) metal layer. A semiconductor fabrication method and a MOS capacitor circuit are also disclosed.
Claims21
1-12. (canceled)
A metal-oxide-semiconductor (MOS) capacitor circuit, comprising:
- a front-end-of-the-line (FEOL) field effect transistor (FET), comprising:
- a source region and a drain region positioned in a semiconductor substrate;
- and
- a gate over the semiconductor substrate;
- and
- a biasing circuit for providing bias to the FET;
- wherein the FET operates in an accumulation mode.
A metal-oxide-semiconductor (MOS) capacitor circuit, comprising:
- a first diffusion region;
- a second diffusion region, having a polarity opposite to a polarity of the first diffusion region;
- a first gate structure over the first diffusion region;
- a second gate structure over the first diffusion region;
- a third gate structure over the first diffusion region;
- a source region in the first diffusion region and between the first gate structure and the second gate structure;
- a drain region in the first diffusion region and between the second gate structure and the third gate structure;
- and
- a first conductive region in the first diffusion region, the first conductive region having a polarity the same with the polarity of the first diffusion region;
- wherein the first diffusion region is coupled to a first voltage through at least the first conductive region, and the first, second and third gate structures are coupled to a second voltage lower than the first voltage.
A metal-oxide-semiconductor (MOS) capacitor circuit, comprising:
- a first diffusion region;
- a second diffusion region, having a polarity opposite to a polarity of the first diffusion region, and the first diffusion region is in the second diffusion region;
- a first gate structure over the first diffusion region;
- a second gate structure over the first diffusion region;
- and
- a first conductive region in the first diffusion region, the first conductive region having a polarity the same with the polarity of the first diffusion region, and the first conductive region being between the first gate structure and the second gate structure;
- wherein the first diffusion region is coupled to a first voltage through at least the first conductive region, and the first and second gate structures are coupled to a second voltage lower than the first voltage.
Dependencies are inferred from the claim text.