Semiconductor Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Min Huang, Shih-Chieh Chang, Cheng-Han Lee
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Abstract
A source/drain region of a semiconductor device is formed using an epitaxial growth process. In an embodiment a first step comprises forming a bulk region of the source/drain region using a first precursor, a second precursor, and an etching precursor. A second step comprises cleaning the bulk region with the etchant along with introducing a shaping dopant to the bulk region in order to modify the crystalline structure of the exposed surfaces. A third step comprises forming a finishing region of the source/drain region using the first precursor, the second precursor, and the etching precursor.
Claims21
A method of forming a semiconductor device, the method comprising:
- epitaxially growing a bulk source/drain region onto a substrate using a first precursor and a second precursor;
- cleaning the bulk source/drain region, wherein the cleaning the bulk source/drain region modifies a crystalline structure of a surface of the bulk source/drain region;
- and
- epitaxially growing a finishing region onto the bulk source/drain region after the cleaning the bulk source/drain region.
A method of forming a semiconductor device, the method comprising:
- growing a first layer of a first material onto a substrate in a first step, wherein the growing the first layer comprises introducing a first precursor, a second precursor, and an etchant with a first lateral etch rate of the first material;
- increasing the first lateral etch rate of the first material by the etchant to a second lateral etch rate in a second step after the first step;
- and
- growing a second layer of the first material onto the first layer in a third step, wherein the growing the second layer of the first material comprises introducing the first precursor, the second precursor, and the etchant.
-20. (canceled)
A method of manufacturing a semiconductor device comprising:
- forming a channel region within a semiconductor material;
- forming a source/drain region adjacent to the channel region within the semiconductor material, wherein the source/drain region has a height to width ratio of between about 0.05 and about 10 and comprises:
- a bulk region with a first concentration of a first dopant;
- an interface region with a second concentration of the first dopant less than the first concentration;
- and
- a cleaning region with a third concentration of the first dopant greater than the second concentration.
Dependencies are inferred from the claim text.