Method of Manufacturing a Super Junction Semiconductor Device and Super Junction Semiconductor Device

A method of manufacturing a semiconductor device in a semiconductor body, the method comprising:

• i) forming a mask on a process surface of a semiconductor layer, the mask comprising a plurality of elongated mask openings exposing a part of the semiconductor layer, the plurality of elongated mask openings extending along a first lateral direction;
• implanting dopants of a first conductivity type into the semiconductor layer based on a first tilt angle α1 between an ion beam direction and a process surface normal and based on a first twist angle ω1 between the first lateral direction and a projection of the ion beam direction on the process surface;
• iii) implanting dopants of a second conductivity type into the semiconductor layer based on a second tilt angle α2 between an ion beam direction and the process surface normal and based on a second twist angle ω2 between the first lateral direction and a projection of the ion beam direction on the process surface;
• iv) increasing a thickness of the semiconductor layer by forming an epitaxial layer;
• v) repeating i) to iv) at least one time, wherein the elongated mask openings are staggered to the elongated mask openings previously formed in process i) along a second lateral direction by an offset, and the tilt and twist angles of ii) and iii) are interchanged.

A. method of manufacturing a semiconductor device in a semiconductor body, the method comprising:

• i) forming a mask on a process surface of a semiconductor layer, the mask comprising a plurality of elongated mask openings exposing a part of the semiconductor layer, the plurality of elongated mask openings extending along a first lateral direction, and wherein at least some of the plurality of elongated mask openings differ in a width;
• implanting first dopants of a first conductivity type into the semiconductor layer based on a first tilt angle α1 between an ion beam direction and a process surface normal and based on a first twist angle ω1 between the first lateral direction and a projection of the ion beam direction on the process surface;
• iii) implanting second dopants of a second conductivity type into the semiconductor layer based on a second tilt angle α2 between an ion beam direction and the process surface normal and based on a second twist angle ω2 between the first lateral direction and a projection of the ion beam direction on the process surface;
• iv) increasing a thickness of the semiconductor layer by forming an epitaxial layer;
• v) repeating i) to iii) at least one time, wherein
• process ii) includes, in addition to implanting dopants of a first conductivity type into the semiconductor layer based on a first tilt angle α1, implanting further dopants of the first conductivity type based on a third tilt angle α3, wherein an absolute value of the third tilt angle α3 is set larger than an absolute value of the first tilt angle α1.