Semiconductor device and method of forming the same

A semiconductor device comprising:

• a plurality of fins over a substrate, wherein each fin of the plurality of fins extends in a first direction substantially perpendicular to a bottom surface of the substrate, and each fin of the plurality of fins comprises a first doped region having a first dopant type;
• an isolation region over the substrate between a first fin of the plurality of fins and a second fin of the plurality of fins adjacent to the first fin;
• a gate dielectric over each fin of the plurality of fins, wherein the gate dielectric contacts the isolation regions, and a dimension of the gate dielectric contacting the isolation region in a second direction perpendicular to the first direction is less than a dimension of the at least one isolation region in the second direction;
• and
• a gate electrode extending continuously across the plurality of fins, wherein the gate electrode is over the gate dielectric.

A method of making a semiconductor device, the method comprising:

• defining a plurality of fins over a substrate, wherein each fin of the plurality of fins extends in a first direction substantially perpendicular to a bottom surface of the substrate;
• depositing an isolation region over the substrate between a first fin of the plurality of fins and a second fin of the plurality of fins adjacent to the first fin;
• doping the plurality of fins with a first dopant having a first dopant type;
• doping the plurality of fins with a second dopant having a second dopant type, wherein the doping of the plurality of fins comprises forming a second doped region in each fin of the plurality of fins, a dimension of the second doped region contacting the isolation region in a second direction perpendicular to the first direction is less than a dimension of the at least one isolation region in the second direction.