Compound semiconductor device

A compound semiconductor device having sub-groups and each sub-group comprising:

• a heterojunction bipolar transistor including a plurality of unit transistors;
• a metal-insulator-metal capacitor electrically connected between a RF input wire and a base wire for each unit transistor of the plurality of unit transistors;
• and
• a bump electrically connected to emitters of the plurality of unit transistors, wherein
• the plurality of unit transistors are arranged in a first direction,
• the bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction,
• the emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction,
• the emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction,
• part of each of the emitters displaced from the center line of the bump is not covered by the bump, and
• each of the metal-insulator-metal capacitors is not covered by the bump.