Tunneling field effect transistor

A tunneling field effect transistor device comprising a drain region, a source region and a gate region, the device comprising:

• a semiconductor substrate;
• a body comprised of a first semiconductor material being doped with a first type of dopant material positioned above said substrate, said body having an axis that is oriented substantially perpendicular to an upper surface of said substrate, said body having two side surfaces and an upper surface, said body extending a full length of said drain region, said gate region and said source region, wherein said first semiconductor material is part of said drain region;
• a second semiconductor material positioned above at least a portion of said gate region and above said source region, wherein said second semiconductor material defines said channel region;
• a third semiconductor material positioned above said second semiconductor material and above at least a portion of said gate region and above said source region, said third semiconductor material being doped with a second type of dopant material that is opposite to said first type of dopant material, wherein said third semiconductor material is part of said source region;
• and
• a gate structure positioned above said first, second and third semiconductor materials in said gate region.