Surface area and schottky barrier height engineering for contact trench epitaxy

Abstract

Forming a contact is disclosed. A trench through an interlayer dielectric layer is opened down to a substrate. The interlayer dielectric layer is formed on the substrate such that the substrate is the bottom surface of the trench. A cleaning process of the trench is performed. The bottom surface of the trench is recessed. A trench contact epitaxial layer is formed in the trench. An oxide layer is formed on top of the trench contact epitaxial layer in the trench. A metal oxide layer is formed on top of the oxide layer in the trench. A metal contact is formed on top of the metal oxide layer, where the oxide layer and the metal oxide layer together form a dipole layer.

Dependencies are inferred from the claim text.