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US 2018/0006131 A1Published application
Lattice matched and strain compensated single-crystal compound for gate dielectric
AssigneeInternational Business Machines Corporation
InventorsGuy M. Cohen, Martin M. Frank
Life of this patent
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Abstract
A transistor device includes a source region, a drain region and a III-V channel material disposed between the source and drain region. A gate dielectric layer is epitaxially grown on the III-V channel material. The gate dielectric layer includes a (X)Se compound, wherein X includes one or more of Zn, Cd and/or Mg. A gate conductor is formed on the gate dielectric layer.
Claims20
A transistor device, comprising:
- a source region;
- a drain region;
- a III-V channel material disposed between the source and drain region;
- a gate dielectric layer epitaxially grown on the III-V channel material, the gate dielectric layer including a (X)Se compound, wherein X includes one or more of Zn, Cd and/or Mg, and wherein the (X)Se compound includes one of ZnCdSe or ZnCdMgSe;
- and
- a gate conductor formed on the gate dielectric layer.
3 more elements
(canceled)
A transistor device, comprising:
- a source region;
- a drain region;
- an InGaAs channel material disposed between the source and drain region;
- a ZnCdSe compound layer epitaxially grown on the InGaAs channel material, where the ZnCdSe compound layer composition is selected to set a bandgap and a lattice constant in relation to a bandgap and a lattice constant of the InGaAs channel material;
- and
- a gate conductor formed on the ZnCdSe compound layer.
3 more elements
A method for forming a transistor device, comprising:
- providing a III-V channel material;
- epitaxially growing a (X)Se compound on the III-V channel material, where X includes one or more of Zn, Cd and/or Mg, and where the (X)Se compound includes one of ZnCdSe or ZnCdMgSe;
- depositing a gate conductor on the (X)Se compound to form a gate structure;
- and
- forming a source region and drain region on opposite sides of the gate structure.
2 more elements
Dependencies are inferred from the claim text.