Semiconductor device and manufacturing method of semiconductor device

A manufacturing method of a semiconductor device having a voltage resistant structure, the manufacturing method of the semiconductor device comprising:

• fixing a rear surface electrode and an outer part on a conductive plate via a conductive adhesive, the rear surface electrode provided below a semiconductor substrate, and the outer part spaced from a side surface of the semiconductor substrate, surrounding the side surface and having a lower permittivity than the semiconductor substrate, and the conductive plate electrically connected to the rear surface electrode;
• forming an inner part by pouring resin between the semiconductor substrate and the outer part;
• and
• after forming the inner part, forming a resistance section by thermal spraying on at least one of an upper surface and a side surface of an extension section having the outer part and the inner part, the resistance section electrically connected to a front surface electrode above the semiconductor substrate and to the rear surface electrode.