Doped Diamond Semi-Conductor and Method of Manufacture
AssigneeAdamantite Technologies LLC
InventorEric David Bauswell
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Abstract
A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may be added to a graphite based ablative layer positioned below a confinement layer, the ablative layer also being graphite based and positioned above a backing layer, to promote formation of diamond particles having desirable semiconductor properties via the action of a laser beam upon the ablative layer. As disclosed, the diamond particles formed by either the machine or method of confined pulsed laser deposition disclosed may be arranged as semiconductors, electrical components, thermal components, quantum components and/or integrated circuits.
Claims30
An apparatus for performing confined pulsed laser deposition at generally ambient room temperature and pressure, the apparatus comprising:
- a) a backing plane;
- b) an ablative coating placed on the backing plane;
- wherein the ablative coating is a mixture of mixture graphite particles and at least one dopant;
- c) a transparent confinement layer attached to the backing plane, the transparent confinement layer having a top face and a bottom face, the ablative coating being sandwiched between the backing plane and the bottom face of the transparent confinement layer;
- d) a laser beam directed to irradiate and ablate through the transparent confinement layer, the laser beam vaporizing the ablative coating into ionized plasma gas, the ionized plasma gas being confined between the confinement layer and the backing plane and generating a shock wave, the shock wave providing sufficient local pressure to synthesize a metaphase from the ablative coating;
- e) wherein the periphery of the ablative coating and the top face of the transparent confinement layer are exposed to the same atmosphere.
An electrical component comprising:
- a) at least a first portion formed from and composed of diamond, the first portion primarily defined as an insulator;
- b) at least a second portion formed from and composed of graphite, the second portion primarily defined as a conductor;
- c) at least a third portion formed from and composed of a doped diamond, the third portion primarily defined as a semiconductor;
- d) wherein the first portion, the second portion and the third portion are integrally formed and work together for transmission of an electrical signal across the electrical component.
An electrical component according to claim 20 wherein a metallic compound is present in the second portion.
An electrical component comprising:
- a) at least a first portion formed from and composed of diamond, the first portion primarily defined as an insulator;
- b) at least a second portion formed from and composed of doped diamond, the second portion primarily defined as a conductor;
- c) wherein the first portion and the second portion are integrally formed and work together for transmission of electricity across the electrical component.
Dependencies are inferred from the claim text.