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US 2018/0006119 A1Published application
Strained and unstrained semiconductor device features formed on the same substrate
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Peng Xu
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Abstract
Embodiments are directed to a method of forming a feature of a semiconductor device. The method includes forming the feature from a semiconductor material having compressive strain that extends throughout a cut region of the feature and throughout a preserve region of the feature. The method further includes converting the cut region of the feature to a dielectric.
Claims20
A method of forming a feature of a semiconductor device, the method comprising:
- forming the feature from a semiconductor material;
- wherein the feature comprises a preserve region and a cut region;
- wherein the feature comprises compressive strain imparted to the feature by the semiconductor material;
- wherein the compressive strain extends throughout the cut region of the feature and throughout the preserve region of the feature;
- and
- converting the cut region of the feature to a dielectric.
3 more elements
A method of forming features of semiconductor devices, the method comprising:
- forming a first feature on a substrate, wherein the first feature comprises a first semiconductor material having compressive strain that extends throughout a first cut region of the first feature and throughout a first preserve region of the first feature;
- forming a second feature on the substrate, wherein the second feature comprises a second semiconductor material having substantially no compressive strain extending throughout a second cut region of the second feature and throughout a second preserve region of the second feature;
- converting the first cut region of the first feature to a dielectric;
- introducing compressive strain into the second cut region;
- and
- removing the second cut region from the second feature.
3 more elements
A configuration of semiconductor devices comprising:
- a substrate;
- and
- a first feature formed on the substrate;
- wherein the first feature comprises a first preserve region having compressive strain that extends throughout the first preserve region;
- wherein the first feature further comprises a first cut region comprising a dielectric.
2 more elements
Dependencies are inferred from the claim text.