Formation of Dislocations in Source and Drain Regions of FinFET Devices

A semiconductor device, comprising:

• a substrate having a first fin and a second fin;
• two neighboring gate structures formed over the first fin and the second fin, wherein the first fin and the second fin comprises a first crystalline material, and wherein the first fin and the second fin protrude higher than neighboring isolation structures;
• and
• a merged source/drain region extending between the first fin and the second fin, the merged source/drain region being between the two neighboring gate structures, the merged source/drain region comprising a second crystalline material different than the first crystalline material, wherein dislocations extend from a point lower than an upper surface of the neighboring isolation structures to a point above the upper surface of the neighboring isolation structures.

A semiconductor device comprising:

• a substrate with at least two fins extending therefrom;
• an isolation structure extending between adjacent ones of the at least two fins;
• a gate structure extending over the at least two fins and the isolation structure;
• and
• a first merged source/drain region and a second merged source/drain region directly on the substrate, the first merged source/drain region and the second merged source/drain region being on opposite sides of the gate structure, the first merged source/drain region having a plurality of first dislocations, a first dislocation of the plurality of first dislocations extending lower than an uppermost surface of the isolation structure, the second merged source/drain region having a plurality of second dislocations, a second dislocation of the plurality of second dislocations extending lower than the uppermost surface of the isolation structure.