RESISTIVE RANDOM ACCESS MEMORY (ReRAM) DEVICE

A resistive random access memory (ReRAM) device comprising:

• a first electrode;
• a switching layer overlying the first electrode and being to at least one of store and readout a memory state in response to a current that flows through the ReRAM device;
• a resistive layer electrically coupled with the switching layer;
• a barrier layer overlying the resistive layer, the barrier layer and the resistive layer each having a cross-sectional area with respect to an axis extending from the first electrode along at least a portion of an axial length of the barrier layer and the resistive layer parallel with the current path that is different from a respective cross-sectional area of the switching layer;
• and
• a second electrode overlying the barrier layer and through which the axis extends from the first electrode, the first and second electrodes being to receive a voltage to provide the current through the ReRAM device.

A resistive random access memory (ReRAM) system comprising:

• a plurality of row conductors that are associated with each of a plurality of rows;
• a plurality of column conductors that are arranged orthogonal with respect to the plurality of row conductors and that are associated with each of a plurality of columns, the plurality of row conductors and the plurality of column conductors being arranged in a crossbar array;
• and
• a plurality of ReRAM devices arranged in an array in the rows and columns, each of the ReRAM devices comprising:
• a memristor element to at least one of store and readout a memory state in response to a current that flows through the respective ReRAM device in response to a voltage provided between a respective one of the plurality of row conductors and a respective one of the plurality of column conductors;
• and
• a selector element having a dynamic current-density area with respect to an amplitude of the current.