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US 2018/0006087 A1Published application
Method for base contact layout, such as for memory
AssigneeMicron Technology, Inc.
InventorsAntonino Rigano, Fabio Pellizzer, Gianfranco Capetti
Life of this patent
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Abstract
Embodiments disclosed herein may relate to forming a base contact layout in a memory device.
Claims20
A memory device, comprising:
- an array of memory cells comprising a plurality of electrodes individually comprising one or more base contact areas at a common depth, wherein a subset of the one or more base contact areas are electrically connected to a respective electrically conductive interconnect that provides an electrically conductive path to one or more selector transistors associated with one or more memory cells of the array.
A memory device, comprising a plurality of word-line interconnect portions extending in a first direction, each word-line interconnect portion tapering from a first width to a second width less than the first width;
- a plurality of base interconnect areas associated with the plurality of word-line interconnect portions, each base interconnect area having a first dimension extending in the first direction that is larger than the second width that extends in a second direction different from the first direction, at least one base interconnect area of the plurality of base interconnect areas contacting a first pair of base contact pillars;
- and
- a second pair of base contact pillars different from the first pair of base contact pillars positioned between base interconnect areas that are located along the second direction, the second pair of base contact pillars being spaced apart from the plurality of word-line interconnect portions.
A memory device, comprising
- a plurality of word-line interconnect portions extending in a first direction, each word-line interconnect portion tapering from a first width to a second width less than the first width;
- and
- a plurality of base interconnect areas for the plurality of word-line interconnect portions, wherein each word-line interconnect portion has a plurality of associated base interconnect areas, wherein at least one base interconnect area contacts a first pair of base contact pillars, wherein a second pair of base contact pillars different from the first pair of base contact pillars is positioned between base interconnect areas located along a second direction different from the first direction, the second pair of base contact pillars being separated from the plurality of word-line interconnect portions, each base interconnect area having a first dimension extending in the first direction that is at least three times larger than the second width of the word-line interconnect portions, the second width extending in the second direction;
- and
- wherein each base interconnect area is longer along the first direction than along the second direction.
2 more elements
Dependencies are inferred from the claim text.