Photogate For Front-Side-Illuminated Infrared Image Sensor and Method of Manufacturing the Same
AssigneeOmniVision Technologies, Inc.
InventorsTakayuki Goto, Dajiang Yang, Keiji Mabuchi, Sohei Manabe
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AssigneeOmniVision Technologies, Inc.
InventorsTakayuki Goto, Dajiang Yang, Keiji Mabuchi, Sohei Manabe
Estimating the term…
An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate.
An image sensor comprising:
A method for manufacturing an image sensor, said method comprising:
An image sensor comprising:
An image sensor comprising:
Dependencies are inferred from the claim text.