Solid-state imaging device and electronic apparatus
AssigneeSony Corporation
InventorHideaki TOGASHI
Life of this patent
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Abstract
There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.
Claims11
A solid-state imaging device comprising:
- one or more photoelectric conversion elements provided on a side of a first surface of a semiconductor substrate;
- a through electrode coupled to the one or more photoelectric conversion elements, wherein the through electrode is provided between the first surface and a second surface of the semiconductor substrate;
- and
- an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate,
- wherein the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode, wherein the through electrode penetrates the semiconductor substrate, and wherein the through electrode is made of a metal or a conductive material.
A solid-state imaging device comprising:
- a photoelectric conversion element provided on a side of a first surface of a semiconductor substrate;
- a through electrode coupled to the photoelectric conversion element, wherein the through electrode is provided between the first surface and a second surface of the semiconductor substrate, and wherein the through electrode is made of a metal or a conductive material;
- a separation groove provided between the through electrode and the semiconductor substrate;
- and
- a dielectric layer embedded in the separation groove, wherein the dielectric layer has insulation properties.
A solid-state imaging device comprising:
- a photoelectric conversion element provided on a side of a first surface of a semiconductor substrate;
- a through electrode coupled to the photoelectric conversion element, wherein the through electrode is provided between the first surface and a second surface of the semiconductor substrate, and wherein the through electrode is made of a metal or a conductive material;
- a separation groove provided between the through electrode and the semiconductor substrate;
- an outer dielectric layer covering an outer side surface of the separation groove;
- an inner dielectric layer covering an inner side surface of the separation groove;
- and
- a gap provided between the outer dielectric layer and the inner dielectric layer.
Dependencies are inferred from the claim text.