Semiconductor device and method for manufacturing same
AssigneeRenesas Electronics Corporation
InventorHiroaki SEKIKAWA
Life of this patent
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Abstract
When a trench that penetrates a semiconductor substrate in a scribe region in a solid-state imaging element of a back side illumination type, occurrence of contamination of the solid-state imaging element caused by an etching step for foaming the trench or a dicing step for singulating a semiconductor chip is prevented. When a silicide layer that covers a surface and the like of an electrode of a transistor is formed, in order to prevent formation of the silicide layer that covers a main surface of the semiconductor substrate in the scribe region, the main surface of the semiconductor substrate is covered with an insulation film before a forming step for the silicide layer.
Claims15
A method for manufacturing a semiconductor device that has a solid-state imaging element of a back side illumination type, comprising the steps of:
- (a) providing a semiconductor substrate that comprises a main surface and a back surface on the opposite side of the main surface;
- (b) forming an element separation region at a part of the main surface of a second region that surrounds a first region of the semiconductor substrate in plan view;
- (c) forming an insulation film that covers the main surface of the semiconductor substrate exposed from the element separation region in the second region;
- (d) after the step (c), forming a silicide layer that is in contact with the main surface of the semiconductor substrate of the first region;
- (e) after the step (d), forming a wiring layer over the main surface of the semiconductor substrate and joining a support substrate above the wiring layer;
- (f) after the step (e), exposing the insulation film by removing the semiconductor substrate of the second region;
- and
- (g) after the step (f), cutting the wiring layer and the support substrate of the second region, and thereby obtaining the solid-state imaging element that includes the semiconductor substrate of the first region.
A semiconductor device that has a solid-state imaging element of a back side illumination type, comprising:
- a support substrate;
- a wiring layer that is formed over the support substrate;
- a semiconductor substrate that is formed over the wiring layer;
- light receiving elements that are formed inside the semiconductor substrate;
- a silicide layer that is in contact with a lower surface of the semiconductor substrate;
- an element separation region that is embedded inside a first trench that is formed at the lower surface of the semiconductor substrate;
- and
- an insulation film that is formed below the semiconductor substrate,
- wherein an end section of an upper surface of the wiring layer is exposed from the semiconductor substrate and the silicide layer, and is covered with the element separation region and the insulation film.
Dependencies are inferred from the claim text.