Display device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHajime KJMURA
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Abstract
It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern having a thick region and a region thinner than the thick region is formed over the metal film using an exposure mask having a semi light-transmitting portion. The pixel electrode, and the metal film formed over part of the pixel electrode to be in contact therewith are formed using the resist pattern. Accordingly, a pixel electrode and a metal film can be formed using one resist mask.
Claims15
(canceled)
A display device comprising:
- a gate electrode over a first substrate;
- a gate insulating film over the gate electrode;
- a semiconductor film over the gate insulating film;
- a source electrode over the semiconductor film;
- a drain electrode over the semiconductor film;
- an interlayer insulating film over the source electrode and the drain electrode;
- a transparent conductive film over the interlayer insulating film;
- a metal film over the transparent conductive film;
- a layer containing liquid crystal over the metal film;
- a light-blocking film over the layer containing liquid crystal;
- and
- a second substrate over the light-blocking film,
- wherein the transparent conductive film comprises a first region which is in contact with the metal film and a second region which is not in contact with the metal film,
- wherein the first region of the transparent conductive film is in contact with one of the source electrode and the drain electrode in a contact hole provided in the interlayer insulating film,
- wherein the second region of the transparent conductive film is a pixel electrode, and
- wherein the light-blocking film overlaps with the first region of the transparent conductive film.
A display device comprising:
- a gate electrode over a first substrate;
- a gate insulating film over the gate electrode;
- a semiconductor film over the gate insulating film;
- a source electrode over the semiconductor film;
- a drain electrode over the semiconductor film;
- an interlayer insulating film over the source electrode and the drain electrode;
- a transparent conductive film over the interlayer insulating film;
- a metal film over the transparent conductive film;
- a layer containing liquid crystal over the metal film;
- a light-blocking film over the layer containing liquid crystal;
- and
- a second substrate over the light-blocking film,
- wherein the transparent conductive film comprises a first region which is in contact with the metal film and a second region which is not in contact with the metal film,
- wherein the first region of the transparent conductive film is in contact with one of the source electrode and the drain electrode in a contact hole provided in the interlayer insulating film,
- wherein the second region of the transparent conductive film is a pixel electrode,
- wherein the light-blocking film overlaps with the first region of the transparent conductive film, and
- wherein the interlayer insulating film comprises an organic resin film, and
- wherein the second region of the transparent conductive film is provided on a flat surface of the interlayer insulating film.
Dependencies are inferred from the claim text.