Methods and apparatus for three-dimensional nand non-volatile memory devices with side source line and mechanical support
AssigneeSanDisk Technologies LLC
InventorsJin Liu, Chun Ge, Johann Alsmeier
Life of this patent
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Abstract
A method of fabricating a monolithic three dimensional memory structure is provided. The method includes forming a stack of alternating word line and dielectric layers above a substrate, forming a source line above the substrate, forming a memory hole extending through the alternating word line and dielectric layers and the source line, and forming a mechanical support element on the substrate adjacent to the memory hole.
Claims18
A method of fabricating a monolithic three dimensional memory structure, the method comprising:
- forming a stack of alternating word line and dielectric layers above a substrate;
- forming a source line above the substrate;
- forming a memory hole extending through the alternating word line and dielectric layers and the source line;
- and
- forming a mechanical support element on the substrate adjacent to the memory hole.
A method of forming a three-dimensional stacked non-volatile memory structure, the method comprising:
- forming a source line above a substrate;
- forming a stack of alternating word line and dielectric layers above the substrate;
- forming a plurality of NAND strings of memory cells in memory holes which extend through the source line and the alternating word line and dielectric layers, each memory cell comprising a control gate formed by one of the word line layers;
- and
- forming a mechanical support element on the substrate adjacent the plurality of NAND strings.
Dependencies are inferred from the claim text.