Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device including the steps of:

• (a) providing a semiconductor substrate having a main surface, the main surface including a first region for a first MISFET and a second region for a second MISFET;
• (b) forming a first lamination pattern having a first gate electrode and a first cap insulation film over the first gate electrode via a first gate insulation film over the main surface of the semiconductor substrate in the first region for the first MISFET;
• (c) forming, after the step (b), a second lamination pattern having a first electrode and a second cap insulation film over the first electrode via a second gate insulation film over the main surface of the semiconductor substrate in the second region for the second MISFET;
• (d) forming, after the step (c), a first semiconductor region used for a source or a drain of the first MISFET in the first region and forming a second semiconductor region for a source or a drain of the second MISFET in the second region;
• (e) forming, after the step (d), a first metal silicide layer over the first semiconductor region of the first MISFET and over the second semiconductor region of the second MISFET;
• (f) forming, after the step (e), a first insulation film over the semiconductor substrate so as to cover the first lamination pattern and the second lamination pattern;
• (g) polishing, after the step (f), the upper surface of the first insulation film to expose the first gate electrode and the first electrode;
• (h) removing, after the step (g), the first electrode so that a first trench is formed in the first insulation film;
• (i) forming a second gate electrode by filling a first conductive film in the first trench;
• and
• (j) forming a second metal silicide layer over the first gate electrode,
• wherein the first gate electrode and the first electrode are covered with the first cap insulation film and the second cap insulation film at the step (e).