Back to results
US 2018/0006046 A1Published application
Semiconductor Structure and Method for Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChiang-Ming Chuang, Chien-Hsuan Liu, Chih-Ming Lee, Kun-Tsang Chuang, Hung-Che Liao, Hsin-Chi Chen
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes a semiconductor substrate, at least one raised dummy feature, at least one memory cell, and at least one word line. The raised dummy feature is present on the semiconductor substrate and defines a cell region on the semiconductor substrate. The memory cell is present on the cell region. The word line is present adjacent to the memory cell.
Claims20
A device comprising:
- a memory cell array, the memory cell array including at least one memory cell gate stack, the at least one memory cell gate stack including a first stack of first materials;
- and
- a dummy feature, the dummy feature including at least one dummy gate stack that at least partially surrounds the memory cell array, the at least one dummy gate stack including a second stack of the first materials.
A semiconductor structure, comprising:
- a semiconductor substrate;
- at least one dummy gate stack present on the semiconductor substrate, wherein the at least one dummy gate stack defines a cell region on the semiconductor substrate;
- and
- at least one memory cell present on the cell region and including an active gate stack, the dummy gate stack and active gate stack each comprising a same stack of layers.
1 more element
A method for forming a semiconductor structure, the method comprising:
- depositing a plurality of gate stack layers on a semiconductor substrate;
- patterning the plurality of gate stack layers to simultaneously form a dummy gate stack feature defining a memory cell region and a plurality of memory cell gate stacks within the memory cell region;
- and
- applying a flowable material on the plurality of memory cell gate stacks and the dummy gate stack feature, wherein flow of the flowable material is at least partially confined by the dummy gate stack feature.
1 more element
Dependencies are inferred from the claim text.