Dischargeable electrical programmable read only memory (eprom) cell
AssigneeHewlett-Packard Development Company, L.P.
InventorsBoon Bing Ng, Lui Cheat Thin, Reynaldo V Villavelez
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Abstract
The present subject matter relates to an electrical programmable read only memory (EPROM) cell. The EPROM cell comprises a semiconductor substrate and a floating gate separated from the semiconductor substrate by a first dielectric layer. A control gate is capacitively coupled to the floating gate through a second dielectric layer disposed between the floating gate and the control gate. In an example, the EPROM cell further comprises a conductive gate connected to the floating gate, wherein the conductive gate is to leak charges from the floating gate in a predetermined leak time period.
Claims15
A dischargeable electrical programmable read only memory (EPROM) cell comprising:
- a semiconductor substrate;
- a floating gate separated from the semiconductor substrate by a first dielectric layer;
- a control gate capacitively coupled to the floating gate through a second dielectric layer disposed between the floating gate and the control gate;
- and
- a conductive gate connected to the floating gate, wherein the conductive gate is to leak charges from the floating gate in a predetermined leak time period.
An integrated circuit comprising:
- an electrical programmable read only memory (EPROM) array having a plurality of EPROM cells disposed in rows and columns, wherein an EPROM cell at a predetermined position in the EPROM array is dischargeable, the EPROM cell comprising:
- a floating gate, wherein the floating gate is to store electrons upon the EPROM cell being programmed;
- and
- a conductive gate, comprising an exposed surface, electrically connected to the floating gate, wherein the conductive gate is to leak the electrons from the floating gate, through the exposed surface, in a predetermined leak time period.
Dependencies are inferred from the claim text.