Static random-access memory (sram) cell array and forming method thereof
AssigneeUnited Microelectronics Corp.
InventorsChun-Hsien Huang, Yu-Tse Kuo, Shu-Ru Wang
Life of this patent
Estimating the term…
Abstract
A static random-access memory (SRAM) cell array forming method includes the following steps. A plurality of fin structures are formed on a substrate, wherein the fin structures include a plurality of active fins and a plurality of dummy fins, each PG (pass-gate) FinFET shares at least one of the active fins with a PD (pull-down) FinFET, and at least one dummy fin is disposed between the two active fins having two adjacent PU (pull-up) FinFETs thereover in a static random-access memory cell. At least a part of the dummy fins are removed. The present invention also provides a static random-access memory (SRAM) cell array formed by said method.
Claims20
A static random-access memory (SRAM) cell array, comprising:
- a plurality of fin structures located on a substrate, the fin structures comprising a plurality of active fins, and a plurality of recesses between the active fins and surrounded by a plurality of isolation structures, wherein each pass-gate FinFET (PG FinFET) shares at least one of the active fin with a corresponding pull -down FinFET (PD FinFET), and at least one of the recesses is between the two active fins having two adjacent pull-up FinFET (PU FinFET) thereover in a static random-access memory cell.
A method of forming a static random-access memory (SRAM) cell array, comprising:
- patterning to form a plurality of fin structures on a substrate, wherein the fin structures comprise a plurality of active fins and a plurality of dummy fins, each pass-gate FinFET (PG FinFET) shares at least one of the active fins with a corresponding pull-down FinFET (PD FinFET), at least one of the dummy fins is disposed between the two active fins having two adjacent pull-up FinFETs (PU FinFET) thereover in a static random-access memory cell;
- and
- removing the dummy fins to form recesses in the substrate.
Dependencies are inferred from the claim text.