Layout pattern for static random access memory

A layout pattern of a static random access memory, comprising:

• a first inverter and a second inverter cross-coupled for data storage, each inverter including a pull-up device (PL) and a pull-down devices (PD);
• each inverter comprising a step-shaped structure disposed on a substrate, the step-shaped structure comprising a first part and a second part arranged along a first direction, and a bridge part connected to the first part and the second part, the bridge part is arranged along a second direction, wherein the first direction is perpendicular to the second direction, and wherein the first part crosses over a first diffusion region, and the second part crosses over a second diffusion region to form the pull-down device (PD), wherein the first part crosses over a third diffusion region to form the pull-up device (PL);
• each inverter has an inverter output, the inverter output connecting a first pass gate structure and a second pass gate structure disposed on the substrate, the first pass gate structure and the first part of the step-shaped structure being arranged along a same direction and comprising a same symmetry axis, the second pass gate structure and the second part of the step-shaped structure being arranged along a same direction and comprising a same symmetry axis, wherein the first pass gate structure crosses over the second diffusion region to form a first pass gate devices (PG1), and the second pass gate structure crosses over the first diffusion region to form a second pass gate devices (PG2);
• and
• each inverter output comprising an extending contact structure at least crossing over the first diffusion region, the second diffusion region and the third diffusion region.