US 2018/0006037 A1 · FABRICATION OF VERTICAL DOPED FINS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS

Abstract

A method of forming a fin field effect transistor (finFET) with a doped substrate region, including forming a plurality of vertical fins on a substrate, forming a first dopant source on one or more of the plurality of vertical fins, wherein the first dopant source is not formed on at least one vertical fin, forming a second dopant source on the at least one vertical fin that does not have a first dopant source formed thereon, and heat treating the plurality of vertical fins on the substrate, the first dopant source, and the second dopant source, wherein the heat treatment is sufficient to cause a first dopant from the first dopant source to diffuse into at least a first portion of the substrate, and a second dopant from the second dopant source to diffuse into at least a second portion of the substrate.

Claims20

Dependent claims

A complementary metal oxide semiconductor (CMOS) device with punch-through stops/wells, comprising:

one or more vertical fin(s) on the substrate in a first region and one or more vertical fin(s) on the substrate in a second region, where the first region is adjacent to the second region;
a first dopant source on the one or more vertical fin(s) in the first region;
a second dopant source on the one or more vertical fin(s) in the second region;
a first doped region in the substrate forming a first punch-through stop/well below the first dopant source;
and
a second doped region in the substrate forming a second punch-through stop/well below the second dopant source.

3 more elements

Dependencies are inferred from the claim text.

Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors

Life of this patent

Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors

Life of this patent

Abstract

Claims20