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US 2018/0006032 A1Published application
Semiconductor Devices and Fabricating Methods Thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Gun You, Sug-Hyun Sung
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Abstract
Provided is a semiconductor device and a fabricating method thereof. The semiconductor device includes a first trench having a first depth to define a fin, a second trench formed directly adjacent the first trench having a second depth that is greater than the first depth, a field insulation layer filling a portion of the first trench and a portion of the second trench, and a protrusion structure protruding from a bottom of the first trench and being lower than a surface of the field insulation layer.
Claims2
A semiconductor device comprising:
- a first trench having a first depth that defines a fin;
- a second trench that is directly adjacent the first trench and that has a second depth that is greater than the first depth;
- a field insulation layer that fills a portion of the first trench and a portion of the second trench;
- and
- a protrusion structure that protrudes from a bottom of the first trench and that is lower than a surface of the field insulation layer.
2 more elements
A fabricating method of a semiconductor device comprising:
- forming a plurality of fins by forming a plurality of first trenches having a first depth;
- defining an active region by forming a second trench having a second depth that is greater than the first depth, the first trench and the second trench partially overlapping each other so that a protrusion structure is formed at a boundary between the first trench and the second trench;
- and
- forming a field insulation layer filling a portion of the first trench and a portion of the second trench.
1 more element
Dependencies are inferred from the claim text.