Method and device for finfet with graphene nanoribbon
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorMING ZHOU
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Abstract
A method for forming a semiconductor device includes providing a substrate structure, which has a semiconductor substrate and a semiconductor fin on the substrate. The method also includes forming a catalytic material layer overlying the semiconductor fins, and forming an isolation region covering the catalytic material layer in a lower portion of the semiconductor fins. Next, a graphene nanoribbon is formed on the catalytic material layer on an upper portion of the semiconductor fin, and a gate structure is formed on the graphene nanoribbon.
Claims19
A method for forming a semiconductor device, characterized by comprising:
- providing a substrate structure, the substrate structure having:
- a semiconductor substrate;
- and
- a semiconductor fin on the substrate;
- forming a catalytic material layer overlying the semiconductor fins;
- forming an isolation region covering the catalytic material layer in a lower portion of the semiconductor fins;
- forming a graphene nanoribbon on the catalytic material layer on an upper portion of the semiconductor fin;
- and
- forming a gate structure on the graphene nanoribbon.
A semiconductor device, comprising:
- a substrate;
- a semiconductor fin on the substrate;
- a catalytic material layer covering the semiconductor fin;
- an isolation region on a side surface of the semiconductor fin, the isolation region covering the catalytic material layer in a lower portion of the semiconductor fin;
- a graphene nanoribbon on the catalytic material layer in the upper portion of the semiconductor fin;
- and
- a gate structure on the graphene nanoribbon.
Dependencies are inferred from the claim text.