Formation of a semiconductor device with rie-free spacers
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
Life of this patent
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Abstract
A method of forming a fin-type field effect transistor (FinFET) can comprise forming at least one fin having an active region and a non-active region. Thereafter, a nitride is deposited on the fin. A dummy gate and nitride mask are formed on the fin over the nitride. Oxide spacers are formed on sidewalls of the dummy gate. The nitride is removed from the fin. Thereafter, a source region and a drain region are formed in the active region of the at least one fin. The result is a more reliable finFET without any possible pinch-off problems and fin erosion. Other embodiments are also described herein.
Claims20
A method of forming a structure of a semiconductor device, the method comprising:
- forming at least one fin having an active region and a non-active region;
- forming a single first nitride on the fin;
- forming a dummy gate and nitride mask on the fin over the single first nitride, wherein the dummy gate is in contact with the single first nitride on the fin;
- forming oxide spacers on sidewalls of the dummy gate;
- and
- removing the single first nitride and forming a source region and a drain region.
A fin-type field effect transistor (FinFET) comprising:
- at least one fin having an active region and a non-active region;
- a channel region in the active region of the at least one fin;
- a source region and a drain region in the active region of the at least one fin
- a gate region around the channel region, wherein the gate region controls a flow of current from the source region through the channel region into the channel region;
- the gate formed by:
- depositing a nitride on the fin;
- forming a dummy gate and nitride mask on the fin over the nitride;
- forming oxide spacers on sidewalls of the dummy gate;
- removing nitride over the fin and forming a source and a drain;
- removing the dummy gate to form a trench;
- and
- forming a gate in the trench.
Dependencies are inferred from the claim text.