Power Semiconductor Device Having Fully Depleted Channel Regions

A method of operating a power semiconductor device that includes a semiconductor body coupled to a first load terminal structure and a second load terminal structure and configured to conduct a load current, a first cell and a second cell, each being configured for controlling the load current and each being electrically connected to the first load terminal structure on the one side and electrically connected to a drift region of the semiconductor body on the other side, the drift region having a first conductivity type, a first mesa included in the first cell, the first mesa including:

• a first port region having the first conductivity type and being electrically connected to the first load terminal structure, and a first channel region being coupled to the drift region, a second mesa included in the second cell, the second mesa including:
• a second port region having the second conductivity type and being electrically connected to the first load terminal structure, and a second channel region being coupled to the drift region, each of the first mesa and the second mesa being spatially confined, in a direction perpendicular to a direction of the load current within the respective mesa, by an insulation structure and exhibiting a total extension of less than 100 nm in said direction, at least one control electrode for inducing each of an inversion channel within the first channel region and an accumulation channel within the second channel region;
• the method comprising:
• operating the power semiconductor device in a conducting state by providing, to the at least one control electrode, a control signal having a voltage within a first range;
• operating the power semiconductor device in a blocking state by providing the control signal with a voltage within a second range different from the first range;
• and
• switching the power semiconductor device from the conducting state to the blocking state by changing the voltage of the control signal from the first range to the second range, said change comprising holding the voltage at an intermediate level within a third range for a hold time period so as to simultaneously provide an inversion channel within the first channel region and an accumulation channel within the second channel region.