US 2018/0006028 A1 · METHOD OF CONCURRENTLY FORMING SOURCE/DRAIN AND GATE CONTACTS AND RELATED DEVICE

Abstract

A method of concurrently forming source/drain contacts (CAs) and gate contacts (CBs) and device are provided. Embodiments include forming metal gates (PC) and source/drain (S/D) regions over a substrate; forming an ILD over the PCs and S/D regions; forming a mask over the ILD; concurrently patterning the mask for formation of CAs adjacent a first portion of each PC and CBs over a second portion of the PCs; etching through the mask, forming trenches extending through the ILD down to a nitride capping layer formed over each PC and a trench silicide (TS) contact formed over each S/D region; selectively growing a metal capping layer over the TS contacts formed over the S/D regions; removing the nitride capping layer from the second portion of each PC; and metal filling the trenches, forming the CAs and CBs.

Claims20

Dependent claims

A device comprising:

metal gates (PC) formed over a substrate, each metal gate having a nitride capping layer over a first potion;
source/drain (S/D) regions formed on sides of the first portion of the PCs;
trench silicide (TS) contacts formed over the S/D regions;
source/drain contacts (CAs) formed over the TS contacts;
gate contacts (CBs) formed over a second portion of the PCs;
an interlayer dielectric (ILD) formed over the PCs and between the CAs and CBs;
and
a metal capping layer formed between the TS contacts and the CAs, the metal capping layer covering a corner portion of the nitride capping layer of an adjacent PC.

5 more elements

Dependencies are inferred from the claim text.

Method of concurrently forming source/drain and gate contacts and related device

Life of this patent

Method of concurrently forming source/drain and gate contacts and related device

Life of this patent

Abstract

Claims20