Power semiconductor device having fully depleted channel regions

A power semiconductor device, comprising:

• a semiconductor body coupled to a first load terminal structure and a second load terminal structure;
• an active cell field implemented in the semiconductor body and configured to conduct a load current, the active cell field being surrounded by an edge termination zone;
• a plurality of first cells and a plurality of second cells provided in the active cell field, each being configured for controlling the load current and each being electrically connected to the first load terminal structure on the one side and electrically connected to a drift region of the semiconductor body on the other side, the drift region having a first conductivity type;
• wherein:
• each first cell comprises a first mesa, the first mesa including:
• a first port region having the first conductivity type and being electrically connected with the first load terminal structure, and a first channel region being coupled to the drift region;
• each second cell comprises a second mesa, the second mesa including:
• a second port region having a second conductivity type and being electrically connected with the first load terminal structure, and a second channel region being coupled to the drift region;
• each first mesa and each second mesa are spatially confined, in a direction perpendicular to a direction of the load current within the respective mesa, by an insulation structure and exhibit a total extension of less than 100 nm in said direction perpendicular to said direction of the load current;
• and wherein
• the active cell field is surrounded by a recombination region which is arranged between the active cell field and at least one lateral edge of the semiconductor body, wherein a charge carrier lifetime inside the recombination region is less than a charge carrier lifetime inside the drift region by a factor of at least 50.