Bidirectional switch having back to back field effect transistors
AssigneeAlpha and Omega Semiconductor Incorporated
InventorSik Lui
Life of this patent
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Abstract
A bi-directional semiconductor switching device includes first and second vertical field effect transistors (FETs) formed in tandem from a semiconductor substrate. A source for the first FET is on a first side of the substrate and a source for the second FET is on a second side of the substrate opposite the first side. Gates for both the first and second FETs are disposed in tandem in a common set of trenches formed a drift region of the semiconductor substrate that is sandwiched between the sources for the first and second FETs. The drift layer acts as a common drain for both the first FET and second FET.
Claims22
A bi-directional semiconductor switching device, comprising:
- first and second vertical field effect transistors (FETs) formed in tandem from a semiconductor substrate, wherein a source for the first FET is on a first side of the substrate and a source for the second FET is on a second side of the substrate opposite the first side, wherein gates for both the first and second FETs are disposed in tandem in a common set of trenches formed in an epitaxial layer of the semiconductor substrate, wherein a the epitaxial layer includes a drift region sandwiched between the source for the first FET and the source for the second FET forms a common drain for both the first FET and second FET.
A method for forming a bi-directional semiconductor switching device, comprising:
- forming first and second vertical field effect transistors (FETs) in tandem from a semiconductor substrate, wherein a source for the first FET is on a first side of the substrate and a source for the second FET is on a second side of the substrate opposite the first side, wherein gates for both the first and second FETs are disposed in tandem in a common set of trenches formed in a drift region of the semiconductor substrate that is sandwiched between the source for the first FET and the source for the second FET, wherein the drift region forms a common drain for both the first FET and second FET.
Dependencies are inferred from the claim text.