3d bonded semiconductor structure with an embedded capacitor

A method of forming a three-dimensional (3D) bonded semiconductor structure, said method comprising:

• providing a first semiconductor structure including a first wafer, a first interconnect structure, and a first bonding oxide layer containing at least one first metallic structure embedded therein, and a second semiconductor structure including a second wafer, a second interconnect structure, and a second bonding oxide layer containing at least one second metallic structure embedded therein;
• forming a high-k dielectric material on a surface of said at least one first metallic structure;
• performing a nitridation process to provide a first nitrided surface layer comprising first nitridized oxide regions in an upper portion of said first bonding oxide layer and a nitridized high-k dielectric material in at least an upper portion of said high-k dielectric material, and to provide a second nitrided surface layer comprising second nitridized oxide regions in an upper portion of said second bonding oxide layer and a nitridized metallic region in an upper portion of said at least one second metallic structure;
• removing nitrogen from said nitridized metallic region to convert said nitridized metallic region into a region that has a same composition as said second metallic structure;
• and
• bonding said first semiconductor structure to said second semiconductor structure, wherein said bonding provides a bonding interface between the first and second nitridized oxide regions and another bonding interface between said nitridized high-k dielectric material and said at least one second metallic structure.