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US 2018/0006020 A1Published application
Device having an active channel region
AssigneeHewlett-Packard Development Company, L.P.
InventorTrudy Benjamin
Life of this patent
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Abstract
In some examples, a transistor includes a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
Claims20
A transistor comprising:
- a substrate;
- a drain in the substrate;
- a source in the substrate;
- a channel between the drain and the source, the channel surrounding the drain and having a channel length to width ratio;
- and
- a gate over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.
3 more elements
A semiconductor device comprising:
- a substrate;
- a drain in the substrate;
- a source in the substrate;
- a channel between the drain and the source, the channel surrounding the drain and having an active channel region that has an active channel region length, and an inactive channel region that has an inactive channel region length that is less than the active channel region length;
- and
- a gate disposed over the active channel region.
3 more elements
Dependencies are inferred from the claim text.