Power converter and semiconductor device

A power converter comprising:

• a semiconductor element disposed on a substrate, the semiconductor element including an output connected to an output node of the substrate, a first input connected to a first control node of the substrate, a second input connected to a second control node of the substrate, a first drive current node connected to a power supply side node of the substrate, and a second drive current node connected to a ground side node of the substrate;
• a thermistor element disposed on the substrate for detecting a temperature of the substrate, the thermistor element having one end that is connected to the ground side node, and another end that is connected to a detection node of the substrate;
• a current detection resistor having one end that is connected to the ground side node and another end that is grounded;
• a first voltage detection unit configured to detect a first potential at the other end of the current detection resistor and a second potential at the ground side node, and output a first detection signal in accordance with a first potential difference between the first potential and the second potential;
• a control unit configured to output, based on the first detection signal, a first control signal to the first input via the first control node and a second control signal to the second input via the second control node to control the semiconductor element;
• a temperature detection resistor having one end that is connected to a reference potential, and another end that is connected to the detection node;
• and
• a temperature detection unit configured to detect a temperature based on a third potential at the detection node, and output a temperature information signal including information on the temperature detected,
• wherein the semiconductor element includes:
• a first transistor having one end that is the first drive current node, another end connected to the output, and a gate that is the first input;
• and
• a second transistor having one end that is connected to the output, another end that is the second drive current node, and a gate that is the second input,
• and wherein
• based on the first detection signal, the control unit outputs the first control signal to the gate of the first transistor via the first control node to control the first transistor, and the second control signal to the gate of the second transistor via the second control node to control the second transistor,
• wherein a resistance value of the temperature detection resistor is greater than a resistance value of the current detection resistor, and a resistance value of the thermistor element at a normal temperature is greater than the resistance value of the temperature detection resistor.