Method of manufacturing interconnect layer and semiconductor device which includes interconnect layer

A method of manufacturing a semiconductor device, the method comprising:

• forming an interconnect layer on a surface of an inter-layer dielectric (ILD) structure;
• wherein the ILD structure includes:
• first contacts, extending through the ILD structure, electrically connected to corresponding first components located in a floor structure underlying the ILD structure;
• at least one second component located within the ILD structure,
• the at least one second component being spaced from the surface of the ILD structure, in a direction perpendicular to a plane of the surface of the ILD structure, a distance which is less than a thickness of the ILD structure;
• and
• second contacts directly contacting corresponding first regions of the at least one second component;
• and
• wherein the forming the interconnect layer includes:
• forming first metallization segments which directly contact corresponding ones of the first contacts;
• and
• forming second metallization segments over a second region of the at least one second component, a width of the second metallization segments being less than a width of the first metallization segments.

A method of manufacturing a semiconductor device, the method comprising:

• forming an interconnect layer on a contact structure;
• wherein the contact structure includes:
• a first dielectric layer on a base layer, the base layer including first components of the semiconductor device;
• first contacts, arranged within the first dielectric layer, directly contacting corresponding ones of the first components;
• a second dielectric layer on the first dielectric layer;
• second contacts, arranged within the second dielectric layer, directly contacting corresponding ones of the first contacts;
• at least one second component arranged within the second dielectric layer;
• and
• third contacts, arranged within the second dielectric layer, directly contacting corresponding ones of the at least one second component, a height of the third contacts being less than a height of the second contacts, the height of the third contacts rendering adjacent regions of the second dielectric layer less susceptible to dielectric breakdown than would third contacts having a height equal to or greater than the height of the second contacts;
• wherein the heights of the contacts are in a reference direction perpendicular to a plane of the surface of the contact structure on which the interconnect layer is formed;
• wherein the forming the interconnect layer includes:
• forming first metallization segments in the second dielectric layer so as to be in direct contact with corresponding ones of the second contacts and the third contacts;
• and
• forming second metallization segments in the adjacent regions of the second dielectric layer such that portions of the second dielectric layer are interposed, relative to the reference direction, between the second metallization segments and the first dielectric layer.