Semiconductor Device and Method of Forming Build-Up Interconnect Structures Over a Temporary Substrate
AssigneeSTATS ChipPAC Pte. Ltd.
InventorsYaojian Lin, Kang Chen
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AssigneeSTATS ChipPAC Pte. Ltd.
InventorsYaojian Lin, Kang Chen
Estimating the term…
A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.
A method of making a semiconductor device, comprising:
A method of making a semiconductor device, comprising:
A method of making a semiconductor device, comprising:
A semiconductor device, comprising:
Dependencies are inferred from the claim text.