Semiconductor structure and a manufacturing method thereof

A semiconductor structure, comprising:

• a substrate including a recess extending into the substrate;
• a first die surrounded by the recess, and including a first front surface, a first back surface opposite to the first front surface and interfaced with a bottom sidewall of the recess, and a first bonding member disposed over the first front surface;
• a second die disposed over the first die, and including a second front surface interfaced with the first front surface, a second back surface opposite to the second front surface and a second bonding member disposed over the second front surface;
• and
• a dielectric material disposed within the recess and surrounding the first die and the second die,
• wherein the first bonding member is interfaced with the second bonding member.

A method of manufacturing a semiconductor structure, comprising:

• receiving a substrate;
• forming a recess extending into the substrate;
• disposing a first die at least partially within the recess and including a first front surface;
• disposing a first dielectric material over the substrate and within the recess to surround the first die;
• disposing a second die over the first die and including a second front surface interfaced with the first front surface;
• disposing a second dielectric material over the first dielectric material to surround the second die,
• wherein the first die includes a first bonding member surrounded by the first dielectric material, the second die includes a second bonding member disposed opposite to the first bonding member and surrounded by the second dielectric material, the first bonding member is bonded with the second bonding member.