Integrated DC-DC Power Converters Through Face-to-Face Bonding
AssigneeInternational Business Machines Corporation
InventorsHariklia Deligianni, Devendra K. Sadana, Edmund J. Sprogis, Naigang Wang
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Abstract
DC-DC power converters with GaN switches, magnetic inductors and CMOS power drivers integrated through face-to-face wafer bonding techniques are provided. In one aspect, an integrated DC-DC power converter includes: a Si CMOS chip having at least one Si CMOS transistor formed thereon; a GaN switch chip, bonded to the Si CMOS chip in a face-to-face manner, having at least one GaN transistor formed thereon; and an on-chip magnetic inductor present either on the Si CMOS chip or on the GaN switch chip. A method of forming an integrated DC-DC power converter is also provided.
Claims23
An integrated DC-DC power converter, comprising:
- a silicon complementary metal-oxide semiconductor (Si CMOS) chip comprising at least one Si CMOS transistor formed thereon and a first dielectric on a front of the Si CMOS chip covering the at least one Si CMOS transistor;
- a gallium nitride (GaN) switch chip comprising at least one GaN transistor formed thereon and a second dielectric on a front of the GaN switch chip covering the at least one GaN transistor, wherein the GaN switch chip is bonded to the Si CMOS chip with the front of the GaN switch chip facing the front of the Si CMOS chip;
- and
- an on-chip magnetic inductor present either on the Si CMOS chip or on the GaN switch chip in between the front of the GaN switch chip and the front of the Si CMOS chip.
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A method of forming an integrated DC-DC power converter, the method comprising:
- forming at least one Si CMOS transistor on an Si CMOS chip;
- depositing a first dielectric on a front of the Si CMOS chip covering the at least one Si CMOS transistor;
- forming at least one GaN transistor on a GaN switch chip;
- depositing a second dielectric on a front of the GaN switch chip covering the at least one GaN transistor;
- forming an on-chip magnetic inductor on either the Si CMOS chip or on the GaN switch chip;
- and
- bonding the Si CMOS chip to the GaN switch chip with the front of the GaN switch chip facing the front of the Si CMOS chip, wherein the on-chip magnetic inductor is present in between the front of the GaN switch chip and the front of the Si CMOS chip.
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Dependencies are inferred from the claim text.