Method for forming hybrid bonding with through substrate via (tsv)
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJing-Cheng LIN
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Abstract
A method for forming a semiconductor device structure and method for forming the same are provided. The method includes hybrid bonding a first wafer and a second wafer to form a hybrid bonding structure, and the hybrid bonding structure comprises a metallic bonding interface and a polymer-to-polymer bonding structure. The method includes forming at least one through-substrate via (TSV) through the second wafer, and the TSV extends from a bottom surface of the second wafer to a top surface of the first wafer.
Claims20
A method for forming a semiconductor device structure, comprising:
- hybrid bonding a first wafer and a second wafer to form a hybrid bonding structure, wherein the hybrid bonding structure comprises a metallic bonding interface and a polymer-to-polymer bonding structure;
- and
- forming at least one through-substrate via (TSV) through the second wafer, wherein the TSV extends from a bottom surface of the second wafer to a top surface of the first wafer.
A method for forming a semiconductor device structure, comprising:
- forming a first bonding structure over a first substrate, wherein the first bonding structure comprises a first conductive material in a first polymer material;
- forming a second bonding structure over a second substrate, wherein the second bonding structure comprises a second conductive material in a second polymer material;
- hybrid bonding the first bonding structure and the second bonding structure;
- and
- forming a first TSV through the second substrate, wherein the first TSV is through a polymer-to-polymer bonding structure.
A method for forming a semiconductor device structure, comprising:
- forming a first conductive material in a first polymer material over a first substrate;
- forming a second conductive material in a second polymer material over a second substrate;
- bonding the first conductive material and the second conductive material, and the first polymer material and the second polymer material to form a hybrid bonding structure;
- thinning the second substrate from a bottom surface of the second substrate;
- and
- forming a TSV through the second substrate, wherein the TSV extends from a bottom surface of the second substrate, through the hybrid bonding structure to a metallization structure over the first substrate.
Dependencies are inferred from the claim text.