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US 2018/0005967 A1Published application
Semiconductor device and method of manufacturing the semiconductor device
AssigneeRenesas Electronics Corporation
InventorAkira YAJIMA
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Abstract
Reliability of a semiconductor device is improved. A slope is provided on a side face of an interconnection trench in sectional view in an interconnection width direction of a redistribution layer. The maximum opening width of the interconnection trench in the interconnection width direction is larger than the maximum interconnection width of the redistribution layer in the interconnection width direction, and the interconnection trench is provided so as to encapsulate the redistribution layer in plan view.
Claims5
A semiconductor device, including:
- a first pad;
- an insulating film covering the first pad;
- a first opening exposing part of a surface of the first pad from the insulating film;
- a first polyimide film having a second opening in communication with the first opening;
- a first interconnection filling the first opening and the second opening, and provided on the first polyimide film;
- a second polyimide film covering the first interconnection;
- and
- a third opening exposing part of the first interconnection from the second polyimide film,
- wherein the first polyimide film is provided only in a region that is planarly superposed on the first interconnection.
6 more elements
A method of manufacturing a semiconductor device, the method comprising:
- (a) forming an insulating film covering a first pad;
- (b) forming a first opening in the insulating film, the first opening exposing part of a surface of the first pad;
- (c) forming a first polyimide film over the insulating film;
- (d) forming a second opening in the first polyimide film, the second opening being in communication with the first opening;
- (e) forming a first interconnection filling the first opening and the second opening, and extending on the first polyimide film;
- (f) processing the first polyimide film with the first interconnection as a mask;
- (g) after the operation (f), forming a second polyimide film covering the first interconnection, and
- (h) forming a third opening in the second polyimide film, the third opening exposing part of the first interconnection. Supplementary Note 4
5 more elements
Dependencies are inferred from the claim text.