Trench mosfet device and the preparation method thereof

A trench metal-oxide-semiconductor field-effect transistor (MOSFET) strip layout wafer comprises

• a plurality of first trenches arranged side by side with a first stripe layout extending along a first direction in a first portion of a first MOSFET chip on the trench MOSFET strip layout wafer;
• and
• a plurality of second trenches arranged side by side with a second stripe layout extending along a second direction in a second portion of a second MOSFET chip on the trench MOSFET strip layout wafer;
• wherein the first direction is perpendicular to the second direction.

A trench metal-oxide-semiconductor field-effect transistor (MOSFET) device comprising:

• a semiconductor substrate of a first conductivity type;
• a plurality of first trenches arranged side by side in a first stripe layout in a first preset area of the semiconductor substrate, the plurality of first trenches extending along a first direction;
• and
• a plurality of second trenches arranged side by side in a second stripe layout in a second preset area of the semiconductor substrate, the plurality of second trenches extending along a second direction perpendicular to the first direction;
• wherein a respective control gate is located in each of the plurality of first trenches and the plurality of second trenches;
• a body region of a second conductivity type is formed on a top portion of the semiconductor substrate near sidewalls of the plurality of first trenches and the plurality of second trenches;
• and
• a source region of the first conductivity type is formed on a top portion of the body region;
• wherein a first portion of the source region is along sidewalls of the plurality of first trenches and a second portion of the source region is along sidewalls of the plurality of second trenches;
• and
• wherein a top metal layer disposed atop the trench MOSFET device contacts mesa regions between adjacent first trenches of the plurality of first trenches and between adjacent second trenches of the plurality of second trenches.