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US 2018/0005955 A1Published application
Package structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Hsien HSIEH, Li-Han HSU, Wei-Cheng WU, Hsien-Wei CHEN, Der-Chyang YEH, Chi-Hsi WU
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Abstract
A package structure and method for forming the same are provided. The package structure includes a substrate and a package layer formed over the substrate. The package structure further includes an alignment structure formed over the package layer, and the alignment structure includes a first alignment mark formed in a trench, and the trench has a step-shaped structure.
Claims20
A package structure, comprising:
- a substrate;
- a package layer formed over the substrate;
- and
- an alignment structure formed over the package layer, wherein the alignment structure comprises a first alignment mark formed in a trench, and the trench has a step-shaped structure.
1 more element
A package structure, comprising:
- a substrate;
- a plurality of semiconductor dies formed over the substrate;
- a package layer formed over the semiconductor dies;
- a first dielectric layer formed over the package layer;
- a first alignment mark and a second alignment mark formed over the first dielectric layer, wherein the first alignment mark and the second alignment mark are made of conductive material;
- and
- a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer has an opening to expose a portion of the top surface of the second alignment mark.
4 more elements
A package structure, comprising:
- a substrate;
- a package layer formed over the substrate;
- a first dielectric layer formed over the package layer, wherein the first dielectric layer has at least three openings to expose a top surface of the package layer;
- a first alignment mark formed over the first dielectric layer;
- a second dielectric layer formed over the first dielectric layer;
- and
- a third dielectric layer formed over the second dielectric layer, wherein the second dielectric layer has a first trench to expose the first alignment mark, the third dielectric layer has a second trench to expose the first alignment mark, and the sidewalls of the first trench and the sidewalls of the second trench form a step-shaped structure.
4 more elements
Dependencies are inferred from the claim text.