Through-silicon via with insulator fill
AssigneeInternational Business Machines Corporation
InventorsDAVID W. ABRAHAM, JOHN M. COTTE, ISAAC LAUER
Life of this patent
Estimating the term…
Abstract
Embodiments are directed to a method of forming a conductive via. The method includes forming an opening in a substrate and forming a conductive material along sidewall regions of the opening, wherein the conductive material occupies a first portion of an area within the opening. The method further includes forming an insulating fill in a second portion of the area within the opening, wherein at least one surface of the conductive material and at least one surface of the insulating fill are substantially coplanar with a front surface of the substrate.
Claims20
A method of forming a conductive via, the method comprising:
- forming an opening in a substrate;
- forming a conductive material along sidewall regions of the opening, wherein the conductive material occupies a first portion of an area within the opening;
- and
- forming an insulating fill in a second portion of the area within the opening;
- wherein at least one surface of the conductive material and at least one surface of the insulating fill are substantially coplanar with a front surface of the substrate.
A method of forming a conductive via, the method comprising:
- forming an opening in a substrate;
- forming a layer of superconducting material along sidewall regions of the opening, wherein the layer of superconducting material occupies a first portion of an area within the opening;
- and
- filling a second portion of the area within the opening with an insulating material;
- wherein the opening extends through the substrate from a front surface of the substrate to a back surface of the substrate;
- wherein at least one surface of the layer of superconducting material and at least one surface of the insulating fill are substantially coplanar with the front surface of the substrate;
- wherein at least one second surface of the layer of superconducting material is substantially coplanar with the back surface of the substrate;
- wherein an electrical conducting path is provided from the at least one surface of the layer of superconducting material to the at least one second surface of the layer of superconducting material.
A conductive via comprising:
- an opening in a substrate;
- a conductive material along sidewall regions of the opening, wherein the conductive material occupies a first portion of an area within the opening;
- and
- an insulating fill in a second portion of the area within the opening;
- wherein at least one surface of the conductive material and at least one surface of the insulating fill are substantially coplanar with a front surface of the substrate.
Dependencies are inferred from the claim text.