Method for capping cu layer using graphene in semiconductor
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorMING ZHOU
Life of this patent
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Abstract
An interconnect structure includes a substrate, a dielectric layer on the substrate, a metal interconnect layer in the dielectric layer and in contact with the substrate, the metal interconnect layer having an upper surface flush with an upper surface of the dielectric layer, and a graphene layer on the metal interconnect layer. The graphene layer insulates a metal from air and prevents the metal from being oxidized by oxygen in the air, thereby increasing the queue time for the CMP process and the device reliability.
Claims18
A method of manufacturing an interconnect structure, the method comprising:
- providing a semiconductor structure comprising a substrate, a dielectric layer on the substrate, and a metal interconnect layer in the dielectric layer and in contact with the substrate;
- and
- forming a graphene layer on the metal interconnect layer.
-20. (canceled)
Dependencies are inferred from the claim text.