Semiconductor package and related methods

A method of making a semiconductor package, the method comprising:

• providing a wafer comprising a first side comprising a plurality of metal oxide semiconductor field effect transistors (MOSFETs);
• grinding a second side of the wafer to bring the wafer to a predetermined thickness between the first side and the second side;
• forming a back side metallization on the second side of the wafer;
• singulating the plurality of MOSFETs into one or more die that each comprise at least two MOSFETs;
• forming a plurality of semiconductor packages by coupling the one or more die to an electrically conductive section using an electrically conductive material, the electrically conductive section having a predetermined thickness;
• curing the electrically conductive material;
• and
• singulating the plurality of semiconductor packages by one of punching or stamping the electrically conductive section;
• wherein, during operation of the die, the at least two MOSFETs are electrically coupled through the electrically conductive section.

A method for making a semiconductor package, the method comprising:

• providing a sheet of electrically conductive material of a predetermined thickness;
• punching a plurality of electrically conductive sections from the sheet;
• providing a wafer comprising a plurality of MOSFETs on a first side of the wafer;
• thinning a thickness of the wafer;
• applying a back side metallization on a second side of the wafer;
• coupling a plurality of electrically conductive sections to a second side of the wafer, each electrically conductive section coupled to two or more of the plurality of MOSFETs;
• singulating each electrically conductive section and a two or more MOSFETs of the plurality of MOSFETs coupled thereto to form a plurality of semiconductor packages;
• and
• electrically coupling through the electrically conductive section the two or more MOSFETs during operation of each of the plurality of semiconductor packages.