Device manufacturing method and device manufacturing apparatus
AssigneeHitachi, Ltd.
InventorsMisuzu SAGAWA, Tetsufumi KAWAMURA
Life of this patent
Estimating the term…
Abstract
The device manufacturing method includes a length measuring step (S5) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.
Claims14
A device manufacturing method comprising
- a length measuring step of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring a thickness of a target object, or a depth of etching, formed on the substrate, wherein
- in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.
A device manufacturing apparatus comprising:
- an FIB-SEM unit that is a combined unit of an FIB unit and an SEM unit;
- and
- a control unit that controls processing and observation in the FIB-SEM unit, wherein
- the control unit comprises a length-measuring processing part for, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring a thickness of a target object, or a depth of etching, formed on the substrate, and
- the length-measuring processing part calculates, from processing data of the target object, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate, and measures the thickness of the target object or the depth of the etching on the basis of the calculated etching angle.
Dependencies are inferred from the claim text.