Vertical cmos devices with common gate stacks
AssigneeInternational Business Machines Corporation
InventorsChoongHyun Lee, Injo Ok, Soon-Cheon Seo
Life of this patent
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Abstract
A semiconductor structure includes a first nanowire of a first material formed on a substrate, at least a second nanowire of a second material different than the first material formed on the substrate and a common gate stack surrounding the first nanowire and the second nanowire. The first nanowire and the second nanowire are vertical with respect to a horizontal plane of the substrate. The first material may be indium gallium arsenide (InGaAs) and the first nanowire may form part of an NFET channel of a CMOS device, while the second material may be germanium (Ge) and the second nanowire may form part of a PFET channel of the CMOS device.
Claims20
A semiconductor structure, comprising:
- a first nanowire of a first material formed on a substrate;
- at least a second nanowire of a second material different than the first material formed on the substrate;
- and
- a common gate stack surrounding the first nanowire and the second nanowire;
- wherein the first nanowire and the second nanowire are vertical with respect to a horizontal plane of the substrate.
An integrated circuit comprising:
- at least one complementary metal-oxide-semiconductor (CMOS) device, the CMOS device comprising:
- a first nanowire of a first material formed on a substrate;
- at least a second nanowire of a second material different than the first material formed on the substrate;
- and
- a common gate stack surrounding the first nanowire and the second nanowire;
- wherein the first nanowire and the second nanowire are vertical with respect to a horizontal plane of the substrate.
A method for forming a semiconductor structure, comprising:
- forming a first nanowire of a first material on a substrate;
- forming a second nanowire of a second material different than the first material on the substrate;
- and
- forming a common gate stack surrounding the first nanowire and the second nanowire;
- wherein the first nanowire and the second nanowire are vertical with respect to a horizontal plane of the substrate.
Dependencies are inferred from the claim text.