Semiconductor device including dual trench epitaxial dual-liner contacts

A method of forming source/drain (S/D) contact stacks in a complementary metal-oxide-semiconductor field-effect transistor (CMOS) device, the method comprising:

• forming a first contact trench over a first source/drain (S/D) region of a first transistor;
• forming a second contact trench over a second S/D region of a second transistor;
• forming a first epi film on both the first S/D region and the second S/D region;
• replacing the first epi film with a different second epi film on the first S/D region;
• forming a first S/D contact stack including a first contact trench liner in the first contact trench without forming the first contact trench liner in the second contact trench;
• and
• using the first S/D contact stack as a mask while forming a second contact stack including a second contact trench liner in the second contact trenches such that the second contact trench liner is blocked from depositing in the first contact trench,
• wherein the first contact trench liner comprises a first liner material, and the second contact trench liner comprises a second liner material different from the first liner material.

A complementary metal-oxide-semiconductor field-effect transistor (CMOS) device, comprising:

• an active semiconductor layer including a first source/drain (S/D) region and a second S/D region different from the first S/D region;
• a first epitaxy film on an upper surface of the first S/D region, the first epitaxy film comprising a first semiconductor material;
• a second epitaxy film on an upper surface of the second S/D region, the second epitaxy film comprising a second semiconductor material;
• a first S/D contact stack atop the first S/D region, the first S/D contact stack including a first contact trench liner having a first base portion on the first epitaxy film and a first inner side wall extending from the first base portion to an upper surface of the first S/D contact stack;
• a second S/D contact stack atop the second S/D region, the second S/D contact stack including a second contact trench liner having a second base portion on the second epitaxy film and a second inner side wall extending from the second base portion to an upper surface of the second S/D contact stack,
• wherein the first inner sidewall directly contacts the second inner sidewall.