Semiconductor contact

A method for forming a semiconductor device, the method comprising:

• forming a semiconductor fin on a substrate;
• forming a gate stack over a channel region of the semiconductor fin, the gate stack including sidewalls extending from a gate stack upper surface to a gate stack base that contacts the channel region, and including gate spacers formed on the sidewalls;
• forming a source/drain region on the semiconductor fin;
• depositing a first insulator layer over the source/drain region;
• removing a portion of the first insulator layer to form a first cavity that exposes a portion of the source/drain region;
• depositing a first conductive material in the first cavity, the first conductive material including conductive sidewalls extending from a conductive base that contacts the source/drain region to a conductive upper surface, the conductive upper surface being flush with the gate stack upper surface;
• forming a conductive extension from the first conductive material over the first insulator layer and over the gate spacers;
• depositing a protective layer over the conductive extension and over the gate stack, the protective layer comprising a first dielectric material;
• depositing a second insulator layer over the protective layer, the second insulator layer comprising a second dielectric material different from the first dielectric material;
• removing a portion of the second insulator layer while preserving the protective layer to form a second cavity that exposes the protective layer;
• removing an exposed portion of the protective layer while preserving a remaining portion of the second insulator layer to expose a portion of the conductive extension;
• and
• depositing a second conductive material in the second cavity while a remaining portion of the protective layer prevents conductive contact between the second conductive material and the gate stack.

A semiconductor device comprising:

• a gate stack arranged on a substrate;
• a source/drain region arranged adjacent to the gate stack;
• a first insulator layer arranged on the source/drain region;
• a second insulator layer arranged on the first insulator layer;
• a conductive contact contacting the source/drain region and passing through the first insulator layer and the second insulator layer, the conductive contact including an conductive extension portion contacting the second insulator layer;
• and
• a protective layer arranged on a portion of the conductive extension portion, the protective layer arranged between the first insulator layer and the second insulator layer.